isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

丝印：BUK764R4-60E；Package：D2PAK；N-channel TrenchMOS standard level FET

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NEXPERIA

安世

N-channel TrenchMOS standard level FET

文件：215.68 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. • AEC-Q101 compliant\n• Suitable for thermally demanding environments due to 175 °C rating\n• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C;

Nexperia

安世