isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch-mode CTV supply systems applications.

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ISC

无锡固电

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

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ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

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ONSEMI

安森美半导体

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

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NTE