刷子

Multicomp

易络盟

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ STM

文件：71.32 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

文件：110.33 Kbytes 页数：8 Pages

SIEMENS

西门子

Low forward voltage drop

IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop     Remark: The TO-218 AB case doesnt solve the standards VDE 0110 and UL 508 for creeping distance

文件：64.569 Kbytes 页数：8 Pages

INFINEON

英飞凌