| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BTS612 | TWO CHANNEL PROFET Discription PROFETR an Intellgent Power switch with integrated protectlon against self-destruction 文件：291.03 Kbytes 页数：9 Pages | SIEMENS 西门子 | SIEMENS | |
BTS612 | Two Channel ProFET | Infineon 英飞凌 | Infineon | |
Smart High-Side Power Switch PROFET One Channel, 10 m? Product Summary The BTS 6123B is a one channel high-side power switch in P-TO-220-7-180 package providing embedded protective functions including ReverSave™. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip tech 文件：338.65 Kbytes 页数：30 Pages | INFINEON 英飞凌 | INFINEON | ||
Smart High-Side Power Switch PROFET One Channel, 10 m? Product Summary The BTS 6123P is a one channel high-side power switch in P-TO-220-7-230 package providing embedded protective functions including ReverSave™. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip tech 文件：906.1 Kbytes 页数：30 Pages | INFINEON 英飞凌 | INFINEON | ||
Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh 文件：183.96 Kbytes 页数：14 Pages | SIEMENS 西门子 | SIEMENS | ||
Smart Two Channel Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circui 文件：308.67 Kbytes 页数：15 Pages | INFINEON 英飞凌 | INFINEON | ||
Smart Two Channel Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circui 文件：308.67 Kbytes 页数：15 Pages | INFINEON 英飞凌 | INFINEON | ||
Fast demagnetization of inductive loads 文件：423.68 Kbytes 页数：14 Pages | INFINEON 英飞凌 | INFINEON | ||
Fast demagnetization of inductive loads 文件：423.68 Kbytes 页数：14 Pages | INFINEON 英飞凌 | INFINEON | ||
Smart High-Side Power Switch PROFET One Channel, 10 mΩ | Infineon 英飞凌 | Infineon |
技术参数
- Package name：
PG-TO263-7
- Channels：
2
- RDS (on) @ Tj = 25°C：
200 mΩ
- RDS (on) @ Tj = 150°C max：
500 mΩ
- Diagnostics：
Digital
- IL Short Circuit Current：
4 A
- Recommended Operating Voltage min：
5 V
- Recommended Operating Voltage max：
34 V
- Operating Temperature min：
-40 °C
- Operating Temperature max：
150 °C
- Family：
Classic PROFET
- toff Turn OFF time max：
400 µs
- ton Turn ON time max：
400 µs
- OPN：
BTS612N1E3128ABUMA1
- Green：
yes
- Halogen-free：
no
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
8866 |
询价 | |||||
NEC |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
33709 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-263 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
Infineon(英飞凌) |
2021/2022+ |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | |||
INFINEON |
23+ |
SOT-263 |
7000 |
询价 | |||
INFINEON/英飞凌 |
22+ |
21056 |
询价 |
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