BTS410H2中文资料西门子数据手册PDF规格书

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.

特性 Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection1)

• Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

• Open drain diagnostic output

• Open load detection in OFF-state

• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

Application

• µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

• Most suitable for inductive loads

• Replaces electromechanical relays, fuses

and discrete circuits