BTS410D2E3062A中文资料西门子数据手册PDF规格书

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOStechnology. Fully protected by embedded protection functions.

特性 Features

•Overload protection

•Current limitation

•Short circuit protection

•Thermal shutdown

•Overvoltage protection (including load dump)

•Fast demagnetization of inductive loads

•Reverse battery protection1)

•Undervoltage and overvoltage shutdown with auto-restart and hysteresis

•CMOS diagnostic output

•Open load detection in ON-state

•CMOS compatible input

•Loss of ground and loss of Vbbprotection

• Electrostatic discharge (ESD) protection