首页>BTS410F2E3062A>规格书详情
BTS410F2E3062A中文资料英飞凌数据手册PDF规格书
BTS410F2E3062A规格书详情
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.
特性 Features
● Overload protection
● Current limitation
● Short circuit protection
● Thermal shutdown
● Overvoltage protection (including load dump)
● Fast demagnetization of inductive loads
● Reverse battery protection1)
● Undervoltage and overvoltage shutdown with auto-restart and hysteresis
● Open drain diagnostic output
● Open load detection in ON-state
● CMOS compatible input
● Loss of ground and loss of Vbb protection
● Electrostatic discharge (ESD) protection
● Green Product (RoHS compliant)
● AEC Qualified
Application
● μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
● Most suitable for inductive loads
● Replaces electromechanical relays, fuses and discrete circuits
产品属性
- 型号：
BTS410F2E3062A
- 制造商：
Infineon Technologies AG
- 功能描述：
Power Switch Hi Side 1.6A 5-Pin(4+Tab) TO-220AB SMD T/R
- 功能描述：
PROFET - Tape and Reel
- 功能描述：
SWITCH SMART HIGH SIDE D2PAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
25+ |
SMD TO-220AB/5 |
3216 |
原装正品 价格优势 |
询价 | ||
Infineon |
NEW |
TO-263 |
7936 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO263 |
66600 |
专业芯片配单原装正品假一罚十 |
询价 | ||
CONEXANT |
24+ |
DIP |
9987 |
公司现货库存,支持实单 |
询价 | ||
Infineon/英飞凌 |
19+ |
68000 |
原装正品价格优势 |
询价 | |||
Infineon |
23+ |
P-TO220-5 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
Infineon Technologies |
22+ |
TO26352 |
9000 |
原厂渠道,现货配单 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NEW |
60000 |
询价 | |||
Infineon(英飞凌) |
2526+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 |
