BTS410F2E3062A中文资料英飞凌数据手册PDF规格书

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.

特性 Features

● Overload protection

● Current limitation

● Short circuit protection

● Thermal shutdown

● Overvoltage protection (including load dump)

● Fast demagnetization of inductive loads

● Reverse battery protection1)

● Undervoltage and overvoltage shutdown with auto-restart and hysteresis

● Open drain diagnostic output

● Open load detection in ON-state

● CMOS compatible input

● Loss of ground and loss of Vbb protection

● Electrostatic discharge (ESD) protection

● Green Product (RoHS compliant)

● AEC Qualified

Application

● μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

● Most suitable for inductive loads

● Replaces electromechanical relays, fuses and discrete circuits