Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu

文件：318.06 Kbytes 页数：15 Pages

Infineon

英飞凌

Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh

文件：167.71 Kbytes 页数：13 Pages

SIEMENS

西门子

Fast demagnetization of inductive loads

文件：477.46 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu

文件：318.06 Kbytes 页数：15 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu

文件：318.06 Kbytes 页数：15 Pages

Infineon

英飞凌

Fast demagnetization of inductive loads

文件：477.46 Kbytes 页数：14 Pages

Infineon

英飞凌

汽车级智能高边开关 | PROFET™

高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。 • 过载保护\n• 电流限制\n• 短路保护\n• 热关断\n• 过压保护（包括负载突降）\n• 感应负载的快速去磁\n• 反向电池保护1)\n• 具有自动重启和磁滞的欠压和过压关断\n• 开漏诊断输出\n• ON 状态下的开路负载检测\n• 兼容 CMOS 的输入\n• 接地损失和Vbb保护损失\n• 静电放电 (ESD) 保护\n• 环保产品（符合 RoHS）\n• AEC 认证\n\n优势:;

Infineon

英飞凌

Smart Highside Power Switch

General Description\nN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. • Overload protection\n• Current limitation\n• Short circuit protection\n• Thermal shutdown\n• Overvoltage protection (including load dump)\n• Fast demagnetization of inductive loads\n• Reverse battery protection1)\n• Undervoltage and overvoltage shutdown with auto-restart and hysteresis\n• Open dra;

Infineon

英飞凌

Smart High-Side Power Switch

General Description\nN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. ● Overload protection\n● Current limitation\n● Short circuit protection\n● Thermal shutdown\n● Overvoltage protection (including load dump)\n● Fast demagnetization of inductive loads\n● Reverse battery protection1)\n● Undervoltage and overvoltage shutdown with auto-restart and hysteresis\n● Open dra;

Infineon

英飞凌

Package：TO-220-5；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5

Infineon

英飞凌