Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu

文件：318.06 Kbytes 页数：15 Pages

INFINEON

英飞凌

Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh

文件：167.71 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu

文件：318.06 Kbytes 页数：15 Pages

INFINEON

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features ● Overload protection ● Current limitation ● Short circu

文件：318.06 Kbytes 页数：15 Pages

INFINEON

英飞凌

Fast demagnetization of inductive loads

文件：477.46 Kbytes 页数：14 Pages

INFINEON

英飞凌

Fast demagnetization of inductive loads

文件：477.46 Kbytes 页数：14 Pages

INFINEON

英飞凌

汽车级智能高边开关 | PROFET™

高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。 • 过载保护\n• 电流限制\n• 短路保护\n• 热关断\n• 过压保护（包括负载突降）\n• 感应负载的快速去磁\n• 反向电池保护1)\n• 具有自动重启和磁滞的欠压和过压关断\n• 开漏诊断输出\n• ON 状态下的开路负载检测\n• 兼容 CMOS 的输入\n• 接地损失和Vbb保护损失\n• 静电放电 (ESD) 保护\n• 环保产品（符合 RoHS）\n• AEC 认证\n\n优势:;

Infineon

英飞凌

Smart Highside Power Switch

General Description\nN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. • Overload protection\n• Current limitation\n• Short circuit protection\n• Thermal shutdown\n• Overvoltage protection (including load dump)\n• Fast demagnetization of inductive loads\n• Reverse battery protection1)\n• Undervoltage and overvoltage shutdown with auto-restart and hysteresis\n• Open dra;

Infineon

英飞凌

Smart High-Side Power Switch

General Description\nN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. ● Overload protection\n● Current limitation\n● Short circuit protection\n● Thermal shutdown\n● Overvoltage protection (including load dump)\n● Fast demagnetization of inductive loads\n● Reverse battery protection1)\n● Undervoltage and overvoltage shutdown with auto-restart and hysteresis\n● Open dra;

Infineon

英飞凌

Package：TO-220-5；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHAN 1:1 TO220-5

INFINEON

英飞凌