Low Vcesat NPN Epitaxial Planar Transistor

Features • Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A • Excellent DC current gain characteristics • High allowable power dissipation, PD=25W(TC=25℃ ) • Large current capability • Pb-free package Applications • DC-DC converter, relay drivers, l

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CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Cystek

全宇昕科技

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

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STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

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POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

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NTE