BTC900N-TP

GDT Protection Component

Features Highinsulationresistance »4KV10/700psmaximumsurgeratingin ‘accordancewithITU-TK21 Ultralowcapacitance(

BU900TP

NPNpowerTRILINTON

BUZ900

N-CHANNELPOWERMOSFET

POWERMOSFETSFORAUDIOAPPLICATIONS FEATURES •HIGHSPEEDSWITCHING •N–CHANNELPOWERMOSFET •SEMEFABDESIGNEDANDDIFFUSED •HIGHVOLTAGE(160V&200V) •HIGHENERGYRATING •ENHANCEMENTMODE •INTEGRALPROTECTIONDIODE •P–CHANNELALSOAVAILABLEASBUZ905&

BUZ900

N-CHANNELPOWERMOSFET

BUZ900DP

N-CHANNELPOWERMOSFET

POWERMOSFETSFORAUDIOAPPLICATIONS FEATURES •HIGHSPEEDSWITCHING •N–CHANNELPOWERMOSFET •SEMEFABDESIGNEDANDDIFFUSED •HIGHVOLTAGE(160V&200V) •HIGHENERGYRATING •ENHANCEMENTMODE •INTEGRALPROTECTIONDIODE •P–CHANNELALSOAVAILABLEASBUZ905DP&am

BUZ900DP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=160V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

BUZ900P

N?밅HANNELPOWERMOSFET

BWA-UCT-900

SureCross짰RS-485toUSBAdapterCable

BZA900A

QuadrupleESDtransientvoltagesuppressor

BZA900A_SER

QuadrupleESDtransientvoltagesuppressor

FEATURES •ESDrating>8kV,accordingtoIEC61000-4-2 •SOT665surfacemountpackage •Commonanodeconfiguration. APPLICATIONS •Computersandperipherals •Audioandvideoequipment •Communicationsystems DESCRIPTION MonolithictransientvoltagesuppressordiodeinafiveleadSOT665packag