| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SENSITIVE GATE TRIACS DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. FEATURES ■ Very low IGT = 10mA ma 文件:69.23 Kbytes 页数:5 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SENSITIVE GATE TRIACS DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. FEATURES ■ Very low IGT = 10mA ma 文件:69.23 Kbytes 页数:5 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
SENSITIVE GATE TRIACS DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. FEATURES ■ Very low IGT = 文件:438.03 Kbytes 页数:6 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
4A four-quadrant triac product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr 文件:688.63 Kbytes 页数:4 Pages | YFWDIODE 佑风微 | YFWDIODE |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Triac
- 性质:
- 封装形式:
直插封装
- 极限工作电压:
800V
- 最大电流允许值:
4A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
TAG220...,TAG231...,TAG421...,
- 最大耗散功率:
- 放大倍数:
- 图片代号:
B-10
- vtest:
800
- htest:
999900
- atest:
4
- wtest:
0
技术参数
- VRRM:
400V
- IT(RMS):
6A
- IT(Peak):
8.5A
- IGT T2+G+:
5mA
- IGT T2+G-:
5mA
- IGT T2-G-:
5mA
- IGT T2-G+:
10mA
- VTM:
1.65V
- Pin Array:
T1T2G
- Package:
TO-220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
DIP3 |
308 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
询价 | ||
23+ |
TO-220 |
5000 |
全新原装的现货 |
询价 | |||
ST |
TO-220 |
2000 |
原装长期供货! |
询价 | |||
ST |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
24+ |
2000 |
询价 | |||||
ST |
24+ |
原厂封装 |
20000 |
原装现货假一罚十 |
询价 | ||
ST |
25+ |
TO-220 |
9240 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
DISCRETE |
50 |
STM |
14350 |
询价 | |||
ST |
24+ |
TO-220 |
2500 |
原装现货热卖 |
询价 | ||
ST |
2011 |
TO220 |
100000 |
全新原装进口自己库存优势 |
询价 |
相关规格书
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074

