BU406

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage;highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ForuseinhorizontaldeflectionoutputstagesofTV’sandCTV’scircuits

BU406

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseinTVhorizontaloutputandswitchingapplications.TO-220A

BU406

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighVoltage:VCEV=400V(Min) ·FastSwitchingSpeed-:tf=750ns(Max) ·LowSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=5A APPLICATIONS ·DesignedforuseinhorizontaldeflectionoutputstagesofTV’sandCRT’s

BU406

NPNPowerTransistors

NPNSILICONPOWERTRANSISTORS7AMPERES−60WATTS150AND200VOLTS Thesedevicesarehighvoltage,highspeedtransistorsforhorizontaldeflectionoutputstagesofTV’sandCRT’s. Features •HighVoltage:VCEV=330or400V •FastSwitchingSpeed:tf=750ns(max) •LowSaturationVoltag

BU406

NPNEpitaxialSiliconTransistor

HighVoltageSwitching *UseInHorizontalDeflectionOutputStage

BU406

NPNSLICONPOWERTRANSISTORJEDECTO-220CASE

DESCRIPTION TheCENTRALSEMICONDUCTORBU406seriestypesareSiliconNPNHighVoltagePowerTransistorsdesignedforfastswitching,horizontaldeflectionoutputstagesofmonitors.

BU406

NPNEPITAXIALSILICONTRANSISTOR(HIGHVOLTAGESWITCHINGUSEINHORIZONTALDEFLECTIONOUTPUTSTAGE)

NPNEPITAXIALSILICONTRANSISTOR HIGHVOLTAGESWITCHINGUSEIN HORIZONTALDEFLECTIONOUTPUTSTAGE

BU406

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighVoltage ●FastSwitchingSpeed:tf=750ns(max) ●LowSaturationVoltage:VCE(sat)=1V(max)@5A ●Pb−FreePackagesareAvailable*

BU406

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features Highvoltage. Applications Highvoltageswitchingandhumidifier.

BU406

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

FEATURES ●Highbreakdownvoltage ●Highcurrentcapability ●Highswitchingspeed ●Highreliability ●RoHSproduct APPLICATIONS ●Highfrequencyswitchingpower supply ●Highfrequencypowertransform ●Commonlypoweramplifier circuit