首页 >BSZ130N03M>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
OptiMOS?? M-Series Power-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
4.5VDriveNchMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
4VDriveNchMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Switching(30V,13A) ●Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). ●Application Powerswitching,DC/DCconverter. ●Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
详细参数
- 型号：
BSZ130N03M
- 制造商：
Infineon Technologies AG
- 制造商：
Rochester Electronics LLC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
9158 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
Infineon/英飞凌 |
23+ |
QFN8 |
69000 |
全新原装现货热卖/代理品牌/可申请样品和规格书 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
DFN-83.3X3.3 |
17093 |
原装进口假一罚十 |
询价 | ||
Infineon |
21+ |
/ |
10000 |
10年磨一剑! |
询价 | ||
INFINEON/英飞凌 |
23+ |
TDSON8 |
28650 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
询价 | ||
Infineon |
20+ |
N/A |
3069 |
确保原装现货,实单价格支持! |
询价 | ||
INFINEON/英飞凌 |
2024+实力库存 |
PG-TSDSON-8 |
3245 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TDSON8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
DFN-83.3X3.3 |
2500 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON/英飞凌 |
24+ |
N/A |
5000 |
只做正品原装现货 |
询价 |
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