BST70M2P4K01-VC数据手册ROHM中文资料规格书

描述 Description

The BST70M2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature even under high power conditions, enabling high current handling within a compact form factor. Compared to top-side cooled discrete devices, it delivers over 3 times the power density—and 1.4 times that of other DIP modules. In PFC applications, it can reduce the mounting area by about 52%, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs. With essential power conversion circuits built into the module, it reduces design workload and enables the miniaturization of power conversion circuits in OBCs and other applications. As a key solution for next-generation automotive systems, it supports the development of high-output, compact electric powertrains.Application ExamplesAutomotive systems: Onboard chargers, electric compressors and more.Industrial Equipment: EV charging stations, V2X systems, AC servos, server power supplies, PV inverters, power conditioners, etc.

特性 Features

• HSDIP20 package with the 4th Generation SiC-MOSFET
• VDSS = 1200V
• Low RDS(on)
• High-speed switching possible
• Low switching losses
• Tvjmax = 175°C
• Compact design
• With high thermal conductivity isolation
• Integrated NTC temperature sensor
• 4.2kV AC 1s insulation