Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

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ROHM

罗姆

HSDIP20, 1200V, 25A, Full-bridge, Automotive / Industrial Grade SiC Power Module

The BST25B2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 4-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature eve • HSDIP20 package with the 4th Generation SiC-MOSFET\n• VDSS = 1200V\n• Low RDS(on)\n• High-speed switching possible\n• Low switching losses\n• Tvjmax = 175°C\n• Compact design\n• With high thermal conductivity isolation\n• Integrated NTC temperature sensor\n• 4.2kV AC 1s insulation;

ROHM

罗姆

QUALCOMM

QUALCOMM

高通

上传：深圳市兴联达电子有限公司(原兴达电子)

BORN伯恩半导体
SOT-363

BORN伯恩半导体

上传：深圳市力仕科电子科技有限公司

BYD/比亚迪
DIP

BYD/比亚迪

上传：佛山市芯光达科技有限公司