BST25B2P4K01-VC中文资料罗姆数据手册PDF规格书

特性 Features

· HSDIP20 package

with the 4th Generation SiC-MOSFET

· VDSS = 1200V

· Low RDS(on)

· High-speed switching possible

· Low switching losses

· Tvjmax = 175°C

· Compact design

· With high thermal conductivity isolation

· Integrated NTC temperature sensor

· 4.2kV AC 1s insulation

Application

· Automotive application

· Inverter, Converter

· (Hybrid) electrical vehicles EV/HEV