BST38B2P4K01-VC

Automotive Grade SiC Power Module

Features ·HSDIP20package withthe4thGenerationSiC-MOSFET ·VDSS=1200V ·LowRDS(on) ·High-speedswitchingpossible ·Lowswitchinglosses ·Tvjmax=175°C ·Compactdesign ·Withhighthermalconductivityisolation ·IntegratedNTCtemperaturesensor ·4.2kVAC1sinsulation

BST38T2P4K01-VC

Automotive Grade SiC Power Module

Features ·HSDIP20package withthe4thGenerationSiC-MOSFET ·VDSS=1200V ·LowRDS(on) ·High-speedswitchingpossible ·Lowswitchinglosses ·Tvjmax=175°C ·Compactdesign ·Withhighthermalconductivityisolation ·IntegratedNTCtemperaturesensor ·4.2kVAC1sinsulation

BST39

NPN high-voltage transistors

DESCRIPTION NPNhigh-voltagetransistorinaSOT89plasticpackage. PNPcomplements:BST15andBST16. FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.350V). APPLICATIONS •Generalpurposeswitchingandamplification.

BST39

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES *FastSwitching *HighhFE.

BST39

NPN High-Voltage Transistors

Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V).

BST39

TRANSISTOR (NPN)

FEATURES ●LowCurrent ●HighVoltage APPLICATIONS ●GeneralPurposeSwitchingandAmplification

BST39

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●LowCurrent ●HighVoltage APPLICATIONS ●GeneralPurposeSwitchingandAmplification

BST39

Marking：AT1；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES LowCurrent HighVoltage APPLICATIONS GeneralPurposeSwitchingandAmplification

BST39

Marking：AT1；Package：SC-62；NPN high-voltage transistors

FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.350V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNhigh-voltagetransistorinaSOT89plasticpackage.PNPcomplements:BST15andBST16.

BST39

350V NPN HIGH VOLTAGE TRANSISTOR IN SOT89

Features •BVCEO>350V •IC=0.5AHighContinuousCurrent •ICM=1APeakPulseCurrent •HighHFEHoldUp •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability