Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.1814 Mbytes 页数：15 Pages

ROHM

罗姆

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.18314 Mbytes 页数：15 Pages

ROHM

罗姆

TRANSISTOR (NPN)

FEATURES ● Low Current ● High Voltage APPLICATIONS ● General Purpose Switching and Amplification

文件：346.11 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

丝印：AT1；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Current High Voltage APPLICATIONS General Purpose Switching and Amplification

文件：1.49182 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：AT1；Package：SC-62；NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16.

文件：281.62 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：AT1；Package：SOT89；NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16.

文件：281.64 Kbytes 页数：7 Pages

NEXPERIA

安世

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * Fast Switching * High hFE.

文件：12.46 Kbytes 页数：1 Pages

ZETEX

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification.

文件：40.73 Kbytes 页数：8 Pages

PHI

PHI

350V NPN HIGH VOLTAGE TRANSISTOR IN SOT89

Features • BVCEO > 350V • IC = 0.5A High Continuous Current • ICM = 1A Peak Pulse Current • High HFE Hold Up • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

文件：467.11 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification.

文件：102.71 Kbytes 页数：6 Pages

恩XP