首页 >BSS123K-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFETN-CHANNELPOWERMOSFET DESCRIPTION TheBSS123L isavailableinSOT23package FEATURES AvailableinSOT23package | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
OptiMOS??Small-Signal-Transistor Features •N-channel •Enhancementmode •Logiclevel(4.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-CHANNELENHANCEMENTMODEMOSFET Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
MOSFET Features •ESDprotectedgate •Highspeedswitching •Pb-freeleadplatingandhalogen-freepackage •Easilydesigneddrivecircuits •Low-voltagedrive •Easytouseinparallel | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInp | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice,Note3and4 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SOT-323Plastic-EncapsulateMOSFETS FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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