首页 >BSS123-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInp | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice,Note3and4 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SOT-323Plastic-EncapsulateMOSFETS FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
N-ChannelEnhancementModeMOSFET | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
N-ChannelMOSFET FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable APPLICATION SmallServoMotorControls PowerMOSFETGateDrivers SwitchingApplication | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-ChannelPowerMOSFET FEATURES ●LowRDS(ON)tominimizeconductivelosses ●Logiclevel ●Lowgatechargeforfastpowerswitching ●RoHSCompliant ●Halogen-freeaccordingtoIEC61249-2-21 APPLICATIONS ●LowSideLoadSwitching ●LevelShiftCircuits ●GeneralSwitchCircuits | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpe | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SiliconNPNtransistorinaTO-92PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
