丝印：BSP126；Package：SOT223；N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. APPLICATIONS · Line current interruptor in telephone sets · Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT2

文件：187.14 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

文件：75.34 Kbytes 页数：12 Pages

PHI

PHI

N-channel vertical D-MOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

N-Channel Enhancement Mode MOSFET

Application | « Adaptor | » Charger « Power management | « SMPS Standby Power

文件：2.3331 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子