BSP110

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeanddesignedforuseintelephoneringercircuitsandforapplicationinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •No

PHI

BSP110

N-Channel 100-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

BSP110

N-channel enhancement mode field-effect transistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSP110inSOT223. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSurfacemountpackage. 3.Applications nRela

BSP110

N-channel TrenchMOS intermediate level FET;

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.\n

BSP110UAB16

动圈喇叭;

ETC