N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown

文件：64.709 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION\nN-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES\n• Direct interface to C-MOS, TTL, etc.\n• High-speed switching\n• No secondary breakdown • Direct interface to C-MOS, TTL, etc.\n• High-speed switching\n• No secondary breakdown;

恩XP

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Collector Current- IC = 5A APPLICATIONS • Designed for high voltage CRT scanning applications.

文件：123.97 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

文件：126.47 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Ultra Fast Recovery Silicon Power Rectifier

Features ● Multiple diffusion ● Epitaxial – planar ● Ultra fast forward recovery time ● Ultra fast reverse recovery time ● Low reverse current ● Very good reverse current stability at high temperature ● Low thermal resistance Applications     Fast rectifiers in S.M.P.S     Freewheeling d

文件：67.09 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司