电流传感器

PrimeScience

普瑞姆赛斯

N-channel enhancement mode TrenchMOS transistor

VDSS = 30 V ID = 6 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast s

文件：111.91 Kbytes 页数：8 Pages

PHI

PHI

N-channel enhancement mode TrenchMOSÔ transistor

FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and rel

文件：208.19 Kbytes 页数：9 Pages

NEXPERIA

安世

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：79.96 Kbytes 页数：7 Pages

SIEMENS

西门子