BSDV10G120E2资料使用说明书供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BSDV10G120E2	文件：187.23 Kbytes Page：6 Pages	BSDV10G120E2 Silicon Carbide Schottky Diode Features ■ High efficiency with low power loss ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant, Pb free and halogen free* Applications 文件：187.23 Kbytes 页数：6 Pages	Bourns 伯恩斯	Bourns
BSDH10G120E2	文件：733.09 Kbytes Page：6 Pages	BSDH10G120E2 Silicon Carbide Schottky Diode Features n High efficiency with low power loss n Low reverse leakage current n High peak forward surge current (IFSM} n Reduced EMI n Maximum operating TJ up to 175 °C n Epoxy compound is flame retardant to the UL 94V-0 standard n RoHS compliant, Pb free and halogen free* Applications 文件：733.09 Kbytes 页数：6 Pages	Bourns 伯恩斯	Bourns
BSG0810NDI	文件：0 bytes Page：0 Pages	INFINEON TSDSON-8	Infineon 英飞凌上传：深圳市威尔健半导体有限公司	Infineon
BSG0810NDI	文件：0 bytes Page：0 Pages	INFINEON/英飞凌 TDSON-8	INFINEON/英飞凌上传：深圳市威尔健半导体有限公司	INFINEON/英飞凌
BSG0810NDIATMA1	文件：0 bytes Page：0 Pages	Infineon TISON-8	Infineon 英飞凌上传：深圳市威尔健半导体有限公司	Infineon

更多BSDV10G120E2供应商更新时间2025-10-4 13:50:00