BSDD10G65E2 Silicon Carbide Schottky Diode

Features ■ High efficiency with low power loss ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant*, Pb free and halogen free** Applications

文件：193.88 Kbytes 页数：7 Pages

Bourns

伯恩斯

BSDH10G65E2 Silicon Carbide Schottky Diode

Features n High efficiency with low power loss n Low reverse leakage current n High peak forward surge current (IFSM) n Reduced EMI n Maximum operating TJ up to 175 °C n Epoxy compound is flame retardant to the UL 94V-0 standard n RoHS compliant*, Pb free and halogen free** Applications

文件：732.4 Kbytes 页数：6 Pages

Bourns

伯恩斯

INFINEON
TSDSON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司

INFINEON/英飞凌
TDSON-8

INFINEON/英飞凌

上传：深圳市威尔健半导体有限公司

Infineon
TISON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司