BSDB10S65E6 Silicon Carbide Schottky Diode

Features ■ Low forward voltage drop, high efficiency ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant*, Pb free and halogen free** Applic

文件：196.35 Kbytes 页数：7 Pages

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伯恩斯

BSDD10S65E6 Silicon Carbide Schottky Diode

Features ■ Low forward voltage drop, high efficiency ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant*, Pb free and halogen free** Applic

文件：196.29 Kbytes 页数：7 Pages

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伯恩斯

BSDH10S65E6 Silicon Carbide Schottky Diode

Features ■ Low forward voltage drop, high efficiency ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant*, Pb free and halogen free** Applic

文件：181.82 Kbytes 页数：6 Pages

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伯恩斯

BSDL10S65E6 Silicon Carbide Schottky Diode

Features n Low forward voltage drop, high efficiency n Low reverse leakage current n High peak forward surge current (IFSM) n Reduced EMI n Maximum operating TJ up to 175 °C n Epoxy compound is flame retardant to the UL 94V-0 standard n RoHS compliant*, Pb free and halogen free** Applic

文件：819.73 Kbytes 页数：7 Pages

Bourns

伯恩斯