采用 SuperSO8 封装的 OptiMOS™ 175°C 功率 MOSFET

Infineon's OptiMOS™ BiC MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.\n Low reverse recovery charge (Qrr) improves the system reliabilit

Infineon

英飞凌

丝印：430N25F；Package：TSON-8-3；MOSFET OptiMOSTMFD Power-Transistor, 250 V

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification • 175°C rated Product Vali

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INFINEON

英飞凌

Package：8-PowerTDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 250V TSON-8

INFINEON

英飞凌

TDSON8

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司

TDSON-8

INFINEON

英飞凌

上传：深圳市威尔健半导体有限公司