BSC430N25NSFD中文资料采用 SuperSO8 封装的 OptiMOS™ 175°C 功率 MOSFET数据手册Infineon规格书

描述 Description

Infineon's OptiMOS™ BiC MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

简介

BSC430N25NSFD属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的BSC430N25NSFD晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。