isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- VDSS=200V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Hard Switching and High Speed Circuit ·Power Tools ·Motor Con

文件：374.66 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：350N20NF；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor, 200 V

文件：937.21 Kbytes 页数：11 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. • Improved hard commutation ruggedness \n• Optimized hard switching behavior \n• Industry’s lowest R ds(on), Q g and Q rr \n• RoHS compliant - halogen free\n\n优势:\n• Highest system reliability\n• System cost reduction\n• Highest efficiency and power density\n• Easy-to-design products;

Infineon

英飞凌

TDSON8

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司

TDSON-8

INFINEON

英飞凌

上传：深圳市威尔健半导体有限公司