N 沟道功率 MOSFET

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 • 优异的开关性能\n• 世界较低的 (R Ds(on))\n• 极低的 Qg 和 Qgd\n• 出色的栅极电荷 x R DS（on）产品（FOM）\n• 符合 RoHS 标准 - 无卤素\n• MSL1 评级 2\n\n优势:\n• 环保\n• 提高效率\n• 极高的功率密度\n• 减少并联\n• 极低的板空间消耗\n• 产品易于设计;

Infineon

英飞凌

OptiMOS?? Power-Transistor

文件：420.84 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel PowerTrench짰 MOSFET

Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switch

文件：454.59 Kbytes 页数：8 Pages

Fairchild

仙童半导体