OptiMOS3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：420.02 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：060N10NS；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：420.02 Kbytes 页数：10 Pages

INFINEON

英飞凌

20V-300V N-Channel Power MOSFET

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 • 优异的开关性能\n• 世界较低的 (R Ds(on))\n• 极低的 Qg 和 Qgd\n• 出色的栅极电荷 x R DS（on）产品（FOM）\n• 符合 RoHS 标准 - 无卤素\n• MSL1 评级 2\n\n优势:\n• 环保\n• 提高效率\n• 极高的功率密度\n• 减少并联\n• 极低的板空间消耗\n• 产品易于设计;

Infineon

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The GT060N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00158 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT060N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.24545 Mbytes 页数：6 Pages

GOFORD

谷峰半导体