BSC034N03LS G

20V-300V N-Channel Power MOSFET; • 极低的栅极和输出电荷\n• 极低的导通状态电阻，小体积封装\n• 设计导入容易\n\n优势:\n• 延长电池寿命\n• 改进 EMI 表现，无需外部缓冲器网络\n• 节省成本\n• 节约空间 \n• 减少功率损耗\n;

极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6）\n

BSC034N03LSG

OptiMOS??Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalanc

IIPP034N03L

iscN-ChannelMOSFETTransistor

IPB034N03L

OptiMOS??Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro

IPB034N03LG

OptiMOS??Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro

IPB034N03L-G

OptiMOS??Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro

IPP034N03L

iscN-ChannelMOSFETTransistor

IPP034N03LG

OptiMOS??Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro