丝印：028N06SC；Package：PG-WSON-8；OptiMOSTM Power-Transistor, 60 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rated • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.02524 Mbytes 页数：11 Pages

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OptiMOS ™ 5 60 V 功率 MOSFET 采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

\n优势:\nImproved heat dissipation\nSuperior thermal resistance\nDrop-in replacement in designs using SuperSO8 package\nLow conduction and switching losses;

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OptiMOSTM Power-Transistor, 60 V

文件：1.12279 Mbytes 页数：12 Pages

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OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c

文件：336.29 Kbytes 页数：9 Pages

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OptiMOSTM3 Power-Transistor

文件：567.65 Kbytes 页数：9 Pages

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New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

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