BSC009NE2LS

20V-300V N-Channel Power MOSFET; • Lowest on-state resistance\n• High DC and pulsed current capability\n• Easy to design-in\n\n优势:\n• Increased battery lifetime/system efficiency\n• Saving space (reducing the number of devices needed)\n• Saving costs\n;

With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.\n

BSC009NE2LS

Optimized for e-fuse and ORing application

BSC009NE2LS

OptiMOSTM Power-MOSFET

BSC009NE2LS5

20V-300V N-Channel Power MOSFET; • 同类中较为出色的导通电阻\n• 基准开关性能 (极低的 R on x Q g 和 R on x Q gd品质因数)\n• 符合 RoHS 标准且无卤素\n• 优化的 EMI 行为 (集成阻尼网络)\n\n优势:\n• 高效率\n• 具有 S3O8 或功率块封装的极高功率密度\n• 降低整体系统成本\n• 在高开关频率下操作\n;

凭借 OptiMOS™ 5 25V 和 30V 产品系列，英飞凌通过在待机和全功率运行中实现高功率密度和高能效来提供基准解决方案。\n

BSC009NE2LS5I

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent--ID=100A@TC=25℃ ·DrainSourceVoltage--VDSS=25V(Min) APPLICATIONS ·SynchronousRectificationinSMPS ·UPS ·MotorControl

BSC009NE2LS5I

20V-300V N-Channel Power MOSFET; • 同类中较为出色的导通电阻\n• 基准开关性能 (极低的 R on x Q g 和 R on x Q gd品质因数)\n• 符合 RoHS 标准且无卤素\n• 优化的 EMI 行为 (集成阻尼网络)\n\n优势:\n• 高效率\n• 具有 S3O8 或功率块封装的极高功率密度\n• 降低整体系统成本\n• 在高开关频率下操作\n;

凭借 OptiMOS™ 5 25V 和 30V 产品系列，英飞凌通过在待机和全功率运行中实现高功率密度和高能效来提供基准解决方案。\n

BSC009NE2LS5

丝印：09NE2LS5；Package：PG-TDSON-8；Optimized for high performance buck converters

BSC009NE2LS5I

丝印：09NE2L5I；Package：PG-TDSON-8；Optimized for high performance buck converters