Metal Oxide Semiconductor Field Effect Transistor

Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile(

文件：1.35083 Mbytes 页数：14 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the \n优势:\n• Save overall system costs by reducing the number of phases in multiphase converters\n• Reduce power losses and increase efficiency for all load conditions\n• Save space with smallest packages like CanPAK™, S3O8 or system in package solution\n• Minimize EMI in the system making external snub;

Infineon

英飞凌

n-Channel Power MOSFET

Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of vol

文件：1.51047 Mbytes 页数：13 Pages

INFINEON

英飞凌

MG-WDSON

INFINEON

英飞凌

上传：深圳市远进半导体有限公司

MG-WDSON-2

INFINEON/英飞凌

上传：深圳诚思涵科技有限公司