BSB012NE2LX

n-Channel Power MOSFET

Description OptiMOS™25VproductsareclassleadingpowerMOSFETsforhighestpowerdensityandenergyefficientsolutions.UltralowgateandoutputchargestogetherwithlowestonstateresistanceinsmallfootprintpackagesmakeOptiMOS™25Vthebestchoiceforthedemandingrequirementsofvol

BSB012NE2LX

n-Channel Power MOSFET;

BSB012NE2LXI

20V-300V N-Channel Power MOSFET; \n优势:\n• Save overall system costs by reducing the number of phases in multiphase converters\n• Reduce power losses and increase efficiency for all load conditions\n• Save space with smallest packages like CanPAK™, S3O8 or system in package solution\n• Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in\n;

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6). \n

BSB012NE2LXI

Metal Oxide Semiconductor Field Effect Transistor

Features •OptimizedSyncFETforhighperformanceBuckconverter •IntegratedmonolithicSchottkylikediode •Lowprofile(