首页 >BSB008NE2LXXT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
n-ChannelPowerMOSFET Features •Optimizedfore-fuseandOR-ingapplication •UltralowRDS(on)inCanPAK-MXfootprint •Lowprofile( | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
BSB008NE2LXXT
- 功能描述：
MOSFET OptiMOS Power MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 | |||
Infineon Technologies |
21+ |
MG-WDSON-2,CanPAK M? |
5000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
INFINEON |
1809+ |
DFN-2 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon Technologies |
22+ |
3WDSON |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
21+ |
3WDSON |
13880 |
公司只售原装,支持实单 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
75000 |
十年专营原装现货,假一赔十 |
询价 | |||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 |
更多BSB008NE2LXXT供应商
更新时间2025-5-15 15:00:00
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