Low Power/Voltage CMOS SRAM 512K X 8 bit

文件：341.64 Kbytes 页数：11 Pages

BSI

连邦科技

Low Power/Voltage CMOS SRAM 512K X 8 bit

文件：341.64 Kbytes 页数：11 Pages

BSI

连邦科技

Low Power/Voltage CMOS SRAM 512K X 8 bit

文件：341.64 Kbytes 页数：11 Pages

BSI

连邦科技

Low Power/Voltage CMOS SRAM 512K X 8 bit

文件：341.64 Kbytes 页数：11 Pages

BSI

连邦科技

Low Power/Voltage CMOS SRAM 512K X 8 bit

„GENERAL DESCRIPTION\nThe BS62LV4001 is a high performance, low power  CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features w • Wide Vcc operation voltage : 2.4V ~ 5.5V\n• Low power consumption\n   Vcc = 3.0V           C-grade: 20mA (Max.) operating current\n                            I -grade: 25mA (Max.) operating current\n                            0.25uA (Typ.) CMOS standby current\n   Vcc = 5.0V C-grade: 45mA (Max.);

Brilliance

华晨汽车

Low Power/Voltage CMOS SRAM 512K X 8 bit

Brilliance

华晨汽车