BS62LV4001DC中文资料Low Power/Voltage CMOS SRAM 512K X 8 bit数据手册Brilliance规格书

描述 Description

„GENERAL DESCRIPTION
The BS62LV4001 is a high performance, low power  CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum access time of 70/ 100ns in 3.0V operation.„FEATURES
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Low power consumption
   Vcc = 3.0V           C-grade: 20mA (Max.) operating current
                            I -grade: 25mA (Max.) operating current
                            0.25uA (Typ.) CMOS standby current
   Vcc = 5.0V C-grade: 45mA (Max.) operation current
                            I -grade: 50mA (Max.) operating current
                            1.5uA (Typ.) CMOS standby current
• High speed access time :
   -70                    70ns (Max.) at Vcc = 3.0V
   -10                   100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options

特性 Features

• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Low power consumption
   Vcc = 3.0V           C-grade: 20mA (Max.) operating current
                            I -grade: 25mA (Max.) operating current
                            0.25uA (Typ.) CMOS standby current
   Vcc = 5.0V C-grade: 45mA (Max.) operation current
                            I -grade: 50mA (Max.) operating current
                            1.5uA (Typ.) CMOS standby current
• High speed access time :
   -70                    70ns (Max.) at Vcc = 3.0V
   -10                   100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options