BS62LV2565J-C55数据手册Brilliance中文资料规格书

描述 Description

„DESCRIPTION
The BS62LV2565 is a high performance, very low  power CMOS Static Random Access Memory organized as 32,768  words  by 8 bits and operates from a wide range  of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 55ns in 5V operation. Easy  memory  expansion is provided by  an  active LOW  chip enable (CE), and  active LOW output  enable (OE) and three-state output drivers.„FEATURES
• Wide Vcc  operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade : 35mA (Max.) operating current
                   I- grade : 40mA (Max.) operating current
                  0.4uA (Typ.) CMOS standby current
• High speed access time :
   -55          55ns (Max.) = 5.0V
   -70          70ns (Max.) = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options

特性 Features

• Wide Vcc  operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade : 35mA (Max.) operating current
                   I- grade : 40mA (Max.) operating current
                  0.4uA (Typ.) CMOS standby current
• High speed access time :
   -55          55ns (Max.) = 5.0V
   -70          70ns (Max.) = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options