BS20

Conduit Accessories

BS2016A

Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package

Features Typical2.05x1.65x0.75mmceramicSMDpackage. lowPowerSupplyVoltage:3.3V,2.5V，1.8V ConformstoAEC-Q200 Tightsymmetry(45to55)available Tri-stateenable/disable TypicalApplication ●WLAN/WiMax ●MobilePhone ●-DSC,Set-topBox,HDTV TypicalApplication

BS2016AD3I505CN20

Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package

Features Typical2.05x1.65x0.75mmceramicSMDpackage. lowPowerSupplyVoltage:3.3V,2.5V，1.8V ConformstoAEC-Q200 Tightsymmetry(45to55)available Tri-stateenable/disable TypicalApplication ●WLAN/WiMax ●MobilePhone ●-DSC,Set-topBox,HDTV TypicalApplication

BS208

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaTO-92envelope.Intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS •High-speedswitching •Nosecondarybreakdown.

PHI

BS208

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features •HighBreakdownVoltage •HighInputImpedance •FastSwitchingSpeed •LowDrain-SourceOn-Resistance •SpeciallySuitedforTelephoneSubsets

BS208

DMOS Transistors (P-Channel)

FEATURES ♦Highbreakdownvoltage ♦Highinputimpedance ♦Lowgatethresholdvoltage ♦Lowdrain-sourceONresistance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown ♦Speciallysuitedfortelephonesu

BS209

DMOS Transistors (P-Channel)

FEATURES ♦Highinputimpedance ♦Lowgatethresholdvoltage ♦Lowdrain-sourceONresistance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown

BS2011

GORE-SHIELD짰 GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications.

BS201N

陶瓷气体放电管(GDT)-二极贴片系列;

BS201N

Gas Discharge Tube