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BRUS120

ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BS120

PhotodiodeforVisibleLight

■Features 1.Spectralsensitivitycharacteristicsakinto 2.Compactflatpackage 4.Infraredlightcut-offtypethatofhumaneyeVR=1V) 3.Lowdarkcurrent(Id:MAX.10-11Aat ■Applications 1.AE(automaticexposure)systemandES 2.Stroboscopes 3.Preciseopticalinstruments(el

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

BS-DRAN120

AC-DCDINRAILMOUNTABLEPOWERSUPPLYINDUSTRIALCONTROLEQUIPMENT

CHINFA

Chinfa Electronics Ind. Co., Ltd.

BSP120

N-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BST120

P-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION P-channelverticalD-MOStransistorinSOT89envelopeandintendedforuseinrelay,high-speedandline-transformerdrivers,usingSMDtechnology. FEATURES •VerylowRDS(on) •DirectinterfacetoC-MOS •High-speedswitching •Nosecondbreakdown

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BT-120

serialadapter

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BTS120

TEMPFET(NchannelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BTS120

TEMPFET(NchannelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BTS120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BU120

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage

SEME-LAB

Seme LAB

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