BR34L02FV-WE2集成电路（IC）的存储器规格书PDF中文资料

BR34L02FV-WE2属于集成电路（IC）的存储器。由罗姆半导体集团制造生产的BR34L02FV-WE2存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

●DESCRIPTION

BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM (based on Serial Presence Detect) for DRAM Memory Module

●FEATURES

256×8 bit architecture serial EEPROM

Wide operating voltage range (1.7V～5.5V)

Two wire serial interface

High reliability connection of Au pad and Au wire

Self-Timed Erase and Write Cycle

Page Write Function(16byte)

Write Protect Mode

Write Protect 1(Onetime Rom) : 00h～7Fh

Write Protect 2(Hardwire WP PIN) : 00h～FFh

Low Power consumption

Write ( 5V ) : 1.2mA (Typ.)

Read ( 5V ) : 0.2mA(Typ.)

Standby ( 5V ) : 0.1μA(Typ.)

DATA security

Write protect feature (WP pin)

Inhibit to WRITE at low VCC

Small package ------ SSOP-B8/TSSOP-B8

High reliability fine pattern CMOS technology

Endurance : 1,000,000 erase / write cycles

Data retention : 40 years

Filtered inputs in SCL / SDA for noise suppression

Initial data FFh in all address