●Description

BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

●Features

・256×8 bit architecture serial EEPROM

・Wide operating voltage range: 1.7V-3.6V

・Two-wire serial interface

・High reliability connection using Au pads and Au wires

・Self-Timed Erase and Write Cycle

・Page Write Function (16byte)

・Write Protect Mode

Settable Reversible Write Protect Function: 00h-7Fh

Write Protect 1 (Onetime Rom) : 00h-7Fh

Write Protect 2 (Hardwire WP PIN) : 00h-FFh

・Low Power consumption

Write (at 1.7V ) : 0.4mA (typ.)

Read (at 1.7V ) : 0.1mA(typ.)

Standby ( at 1.7V ) : 0.1μA(typ.)

・DATA security

Write protect feature (WP pin) Inhibit to WRITE at low VCC

・Compact package: TSSOP-B8, VSON008X2030

・High reliability fine pattern CMOS technology

・Rewriting possible up to 1,000,000 times

・Data retention: 40 years

・Noise reduction Filtered inputs in SCL / SDA

・Initial data FFh at all addresses

BR34E02NUX-WTR属于集成电路（IC） > 存储器。罗姆半导体集团制造生产的BR34E02NUX-WTR存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。