丝印：BR2501L；Package：BR-L；Bridge Rectifiers

FEATURES UL recognition, file #E230084 Universal 3-way terminals: snap-on, wire wrap-around，or PCB mounting High surge current capability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：569.71 Kbytes 页数：3 Pages

RFE

RFE international

整流桥

YJ

益嘉源

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

文件：98.73 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

文件：21.83 Kbytes 页数：2 Pages

NTE

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

文件：33.44 Kbytes 页数：2 Pages

PANASONIC

松下