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DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm Semiconductor

罗姆罗姆半导体集团

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm Semiconductor

罗姆罗姆半导体集团

DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm Semiconductor

罗姆罗姆半导体集团

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm Semiconductor

罗姆罗姆半导体集团

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm Semiconductor

罗姆罗姆半导体集团

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES •Compact •Lowprofilepackage •Low-cost •Sidelookingplasticpackage APPLICATIONS •Photointerrupters •Opticalswitches •Toys

KODENSHIKodenshi Group

可天士可天士光电子集团

ESDS314

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

ESDS314DBVR

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

EVAL-ADXL314Z

±200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

EVAL-ADXL314Z

짹200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

F-314X

ChassisMountSingleSecondary

TRIAD

TRIAD MAGNETICS

FDG314P

DigitalFET,P-Channel

GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H314

LANDISCRETETRANSFORMERMODULES

pulse

Pulse Electronics

H314

10/100Base-TXSinglePortTransformersModules

pulse

Pulse Electronics

H314

LANDISCRETETRANSFORMERMODULES

LANFILTEREDCONNECTORS LANGIGABITICCROSSREFERENCE LAN10/100BASE-TXICCROSSREFERENCE LAN10BASE-TICCROSSREFERENCE

pulse

Pulse Electronics

HCPL-314J

0.4AmpOutputCurrentIGBTGateDriveOptocoupler

Description TheHCPL-315XconsistsofaLEDopticallycoupledtoanintegratedcircuitwithapoweroutputstage.ThisoptocouplerisideallysuitedfordrivingpowerIGBTsandMOSFETsusedinmotorcontrolinverterapplications.Thehighoperatingvoltagerangeoftheoutputstageprovidesthe

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

详细参数

  • 型号:

    BQ-N314RD

  • 制造商:

    BRIGHT

  • 制造商全称:

    BRIGHT LED ELECTRONICS CORP

  • 功能描述:

    8.50mm(0.34) high four digit seven segments display

供应商型号品牌批号封装库存备注价格
LEDBRIGHT
23+
DIP
18000
询价
LEDBRIGHT
06+07+
DIP
45
询价
LEDBRIGHT
23+
DIP
5000
原装正品,假一罚十
询价
LEDBRIGHT
2023+
DIP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
LEDBRIGHT
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
LEDBRIGHT
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
BRI
21+
65230
询价
BRIGHT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
LEDBRIGHT
21+ROHS
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多BQ-N314RD供应商 更新时间2024-5-27 18:44:00