BSS138

DirectLogic-LevelInterface:TTL/CMOS

FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display,Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

BSS138

N-CHANNELLOGICLEVELENHANCEMENTMODE

BSS138

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS50V ●ID340mA ●RDS(ON)(atVGS=10V)

BSS138

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible Applications ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

BSS138

N-ChannelMOSFET

■Features ●VDS(V)=50V ●ID=200mA(VGS=10V) ●RDS(ON)

BSS138

N-ChannelEnhancementModeMOSFET

Features •50V/0.2A, RDS(ON)=3.5Ω@VGS=5V.Id=0.2A RDS(ON)=10Ω@VGS=2.75V.Id=0.2A •SuperHighdensecelldesignforextremelylowRDS(ON) •ReliableandRugged. •LowThresholdVoltage(0.5V-1.5V)MakeitIdealforLowVoltageApplications. •SOT-23forSurface

BSS138

Plastic-EncapsulateMosfets

N-ChannelMOSFET FEATURES •HighdensitycelldesignforextremelylowRDS(ON) •RuggedandReliable •CompactindustrystandardSOT-23surfacemountpackage

BSS138

N-CHANNELENHANCEMENTMODEMOSFET

Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHi

BSS138

N-ChannelEnhancementModeMOSFET

Feature ●50V/0.2A, RDS(ON)=3.5Ω(MAX)@VGS=5V.Id=0.2A RDS(ON)=10Ω(MAX)@VGS=2.75V.Id=0.2A ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●LowThresholdVoltage(0.5V—1.5V)MakeitIdealforLowVoltageApplications. ●SOT-23forSurf

BSS138

N-Channel50-V(D-S)MOSFET

N-Channel50-V(D-S)MOSFET FEATURE ●LowOn-Resistance ●LowGateThresholdVoltage ●FastSwitchingSpeed ●LowInput/OutputLeakage