CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CHM3120JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT10Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchin

CHM3120PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT36Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CLM3120

PHOTOMODSNEONMODULES

CLM3120A

PHOTOMODSNEONMODULES

CPH3120

CompactMotorDriverApplications

Features •Smallsaturationvoltage. •Containsadiodebetweencollectorandemitter. •Containsbiasresistancebetweenbaseandemitter. •Largecurrentcapacity. •Compactpackagefacilitatesimplementationofhigh-density,small-sizedhybridICs.

CRO3120A

LOWCOST-HIGHPERFORMANCEVOLTAGECONTROLLEDOSCILLATOR

CRO3120C-LF

VOLTAGECONTROLLEDOSCILLATOR

CRO3120C-LF

Voltage-ControlledOscillatorSurfaceMountModule

CSD3120H

SingleSCRPOW-R-BLOK??Modules400Amperes/1200-1600Volts

Description: PowerexSingleSCRPOW-R-BLOK™Modulesaredesignedforuseinapplicationsrequiringphasecontrolandisolatedpackaging.Themodulesareisolatedforeasymountingwithothercomponentsoncommonheatsinks. Features: □IsolatedMounting □MetalBaseplate □LowThermalImpeda