包装：散装 功能：LCD 1.28" 类别：开发板，套件，编程器 评估板 - 扩展板，子卡 描述：DEVELOPMENT SPECIALIZED

TI2

德州仪器

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

文件：50.8 Kbytes 页数：8 Pages

PHI

飞利浦

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.53 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：72.78 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体